Growth of high purity InGaAs LPE layers and their characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Effect of Baking Temperature on Purity of LPE Ga0.47In0.53As
2. Growth and photoluminescence spectra of high‐purity liquid phase epitaxial In0.53Ga0.47As
3. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
4. Photocapacitance effects of deep traps inn‐type InP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electron mobility in InO.53GaO.47As as a function of concentration and temperature;Microelectronics Journal;1995-10
2. Copper-related defects inIn0.53Ga0.47As grown by liquid-phase epitaxy;Physical Review B;1993-01-15
3. On the calculation of electron mobility in In0.53Ga0.47As;Solid-State Electronics;1992-09
4. Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga0.47In0.53As;Japanese Journal of Applied Physics;1992-07-15
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