Electron mobility in InO.53GaO.47As as a function of concentration and temperature
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference19 articles.
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3. Depletion and enhancement mode In0.53Ga0.47As/InP junction field effect transistor with a p-InGaAs confinement layer;Cheng;Appl. Phys. Lett.,1985
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5. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials;Jacoboni;Rev. Mod. Phys.,1983
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD;IEICE Electronics Express;2008
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