Depletion and enhancement mode In0.53Ga0.47As/InP junction field‐effect transistor with ap+‐InGaAs confinement layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95875
Reference4 articles.
1. A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxy
2. Double heterostructure Ga0.47In0.53As MESFETs by MBE
3. In0.53Ga0.47As submicrometer FET's Grown by MBE
4. Saturation velocity determination for In0.53Ga0.47As field‐effect transistors
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1. A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array;IEEE Photonics Technology Letters;1996-04
2. Electron mobility in InO.53GaO.47As as a function of concentration and temperature;Microelectronics Journal;1995-10
3. Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer;IEEE Electron Device Letters;1987-08
4. Optoelectronic integrated circuits;Proceedings of the IEEE;1987
5. Narrow Bandgap Semiconductor Devices;NATO ASI Series;1987
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