Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
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1. Molecular Beam Epitaxy;Epitaxy;2004
2. Interfacet surface diffusion in selective area epitaxy of III–V semiconductors;Applied Physics Letters;1999-04-12
3. Selective area epitaxy of GaAs using tri-isopropylgallium;Journal of Electronic Materials;1998-05
4. Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors;Journal of Crystal Growth;1997-12
5. Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy;Journal of Applied Physics;1997-11-15
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