Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Regrown ohmic contacts to thin GaAs layers and two‐dimensional electron gas
2. Selectively regrown contacts to field-effect transistors with two-dimensional electron-gas channels
3. Selective growth of ultra-low resistance GaAs/InGaAs for high performance InGaAs FETs
4. Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure
5. Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy;Journal of Crystal Growth;2002-02
2. Selective area growth of InP and GaAs by chemical beam epitaxy using a novel temperature control: effects of growth conditions and pattern directions;Journal of Crystal Growth;2002-02
3. Gallium nitride growth using diethyl gallium chloride as an alternative gallium source;Journal of Crystal Growth;2000-05
4. Selective epitaxial growth of GaAs using dimethylgalliumchloride by multi-wafer low-pressure metal organic vapor phase epitaxy (LP-MOVPE);Journal of Crystal Growth;1999-06
5. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy;MRS Internet Journal of Nitride Semiconductor Research;1999
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