Compositional profile of HgCdTe in metalorganic chemical vapor deposition (MOCVD) system with multinozzles
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride
2. The influence of crystallographic orientation on gallium incorporation in HgCdTe grown by metalorganic chemical vapor deposition on GaAs
3. Indium doping ofn‐type HgCdTe layers grown by organometallic vapor phase epitaxy
4. Organometallic Epitaxy of Extrinsic N-Type HgCdTe Using Trimethylindium
5. The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
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1. Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication;Science China Physics, Mechanics & Astronomy;2023-02-10
2. CdTe(111)B/Si(100) structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing;Journal of Crystal Growth;1996-10
3. Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer;Journal of Applied Physics;1996-09-15
4. Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor;Journal of The Electrochemical Society;1995-12-01
5. Effect of dislocations on 1/f noise of long wavelength infrared photodiodes fabricated with HgCdTe layers grown on GaAs by metalorganic vapor phase epitaxy;Journal of Electronic Materials;1995-09
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