The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity
2. Doping properties of selected impurities in Hg1−x Cdx Te
3. Diffusion in CdxHg1-xTe and related materials
4. Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions
5. Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy
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