MOVPE of II–VI materials-Reference-Cited by-同舟云学术

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MOVPE of II–VI materials

Published:1997-01 Issue:2-4 Volume:35 Page:177-206
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Irvine S.J.C.,Stafford A.,Ahmed M.U.,Prete P.,Berrigan R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference101 articles.

1. Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition

2. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure

3. The growth by MOVPE and characterisation of CdxHg1−xTe

4. The Use of Metal-Organics in the Preparation of Semiconductor Materials

5. Metalorganic vapour phase epitaxy of mercury cadmium telluride

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects;Nanomaterials;2024-02-24

2. Roughness of CdTe thin films grown on glass by hot wall epitaxy;Journal of Physics: Condensed Matter;2004-12-11

3. Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates;Journal of Crystal Growth;2003-09

4. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01

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