Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99476
Reference13 articles.
1. The growth by MOVPE and characterisation of CdxHg1−xTe
2. High quality Hg1−xCdxTe epitaxial layers by the organometallic process
3. Metalorganic growth of high‐purity HgCdTe films
4. MOCVD growth of CdTe and HgCdTe
5. Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride
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2. Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe;Journal of Crystal Growth;2002-04
3. Effect of lattice match and Zn addition on the properties of Hg1−x(Cd1−yZny)xTe epilayers grown by isothermal vapor phase epitaxy;Materials Science and Engineering: B;1999-05
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