Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Properties of metal‐organic chemical‐vapor‐deposition mercury telluride contacts onp‐type cadmium telluride
2. Microcalorimeter arrays for high resolution soft X-ray spectroscopy
3. The growth by MOVPE and characterisation of CdxHg1−xTe
4. A new MOVPE technique for the growth of highly uniform CMT
5. Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
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1. CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD;Applied Mechanics and Materials;2012-11
2. Numerical study of the ZnO growth by MOCVD;Journal of Crystal Growth;2004-03
3. Electronic structure and optical properties of CdTe rock-salt high pressure phase;physica status solidi (b);2003-02
4. Pressure and temperature dependence of the band-gap in CdTe;physica status solidi (b);2003-02
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