Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire-Reference-Cited by-同舟云学术

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Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire

Published:1997-08 Issue:3-4 Volume:179 Page:585-591
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sochinskii N.V.,Muñoz V.,Bernardi S.,Espeso J.I.,Alves E.,da Silva M.F.,Soares J.C.,Marín C.,Diéguez E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Narrow Gap Cadmium-based Compounds;Irvine,1994

2. Vapor phase epitaxy of Hg1−xCdxTe on CdTe heteroepitaxial substrates

3. Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates

4. Structural properties of CdTe and Hg1 − xCdxTe epitaxial layers grown on sapphire substrates

5. Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hg1−xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique;Journal of Crystal Growth;2017-01

2. Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

3. Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates;Journal of Crystal Growth;2003-09

4. Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe;Journal of Crystal Growth;2002-04

5. Properties of HgCdTe films obtained by laser deposition on a sapphire;Applied Surface Science;2001-06

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