Structural properties of CdTe and Hg1 − xCdxTe epitaxial layers grown on sapphire substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Properties of narrow gap cadmium-based compounds,1994
2. Structural characterization of Hg0.78Cd0.22Te/CdTe LPE heterostructures grown from Te solutions
3. Molecular‐beam epitaxial growth of CdTe(112) on Si(112) substrates
4. Near‐surface region characterization by extremely asymmetric Bragg reflection topography
5. Direct molecular‐beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates
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1. Hg1−xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique;Journal of Crystal Growth;2017-01
2. CdTe polycrystalline films for X-ray digital imaging applications;Thin Solid Films;2005-01
3. Morphology and electrical properties of Pb1−xCdxTe/CdTe heterostructures;The European Physical Journal Applied Physics;2004-07
4. Anisotropically etched Si surface and the electrical properties of Si/HgCdTe heterostructures;Thin Solid Films;2003-03
5. Vapor phase epitaxy of Hg1−xCdxI2 on sapphire;Journal of Crystal Growth;1998-08
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