Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor-Reference-Cited by-同舟云学术

Modeling of Epitaxial Silicon Thin‐Film Growth on a Rotating Substrate in a Horizontal Single‐Wafer Reactor

Published:1995-12-01 Issue:12 Volume:142 Page:4272-4278
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Habuka Hitoshi¹,Nagoya Takatoshi²,Katayama Masatake¹,Shimada Manabu¹²³,Okuyama Kikuo¹²³

Affiliation:

1. Shin‐Etsu Handotai Company, Limited, Isobe Research and Development Center, Annaka, Gunma 379‐01, Japan

2. Shin‐Etsu Handotai Company, Limited, Isobe Plant, Annaka, Gunma 379‐01, Japan

3. Department of Chemical Engineering, Faculty of Engineering, Hiroshima University, Higashi‐Hiroshima, Hiroshima 724, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048496/pdf

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