Effects of mercury partial pressure on defects in HgTe epitaxial layers grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Vapor-crystal equilibrium and electrical properties of HgTe
2. Epitaxial growth of HgTe by a MOVPE process
3. The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
4. Origin of defects in (111) HgTe grown by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1993-08
2. Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.;Journal of Crystal Growth;1992-02
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