Origin of defects in (111) HgTe grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy
2. (100) versus (111)B crystallographic orientation of Hg1−xCdxTe grown by molecular‐beam epitaxy
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4. Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy
5. X‐ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in (1,1,1) Hg1−xXxTe/CdTe superlattices
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1. MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs*;Chinese Physics Letters;2020-03-01
2. The temperature dependence of anomalous magnetoresistance and weak antilocalization in HgTe/CdTe (111) quantum wells;Journal of Applied Physics;2020-02-21
3. Twin-formation mechanisms for HgCdTe epilayers;Journal of Crystal Growth;1992-02
4. Effects of mercury partial pressure on defects in HgTe epitaxial layers grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1992-02
5. Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.;Journal of Crystal Growth;1992-02
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