Origin of defects in (111) HgTe grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy
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4. Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy
5. X‐ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in (1,1,1) Hg1−xXxTe/CdTe superlattices
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs*;Chinese Physics Letters;2020-03-01
2. The temperature dependence of anomalous magnetoresistance and weak antilocalization in HgTe/CdTe (111) quantum wells;Journal of Applied Physics;2020-02-21
3. Effects of mercury partial pressure on defects in HgTe epitaxial layers grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1992-02
4. Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.;Journal of Crystal Growth;1992-02
5. Twin-formation mechanisms for HgCdTe epilayers;Journal of Crystal Growth;1992-02
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