Hg1−xCdxTe epitaxial layers grown by low mercury partial pressure metalorganic chemical vapor deposition and extended defect characterization.
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. The growth of CdxHg1−xTe using organometallics
2. Annealing and electrical properties of Hg1−xCdxTe grown by OMVPE
3. A new MOVPE technique for the growth of highly uniform CMT
4. Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular‐beam‐epitaxial growth of Hg1−xCdxTe and CdTe
5. Origin of defects in (111) HgTe grown by molecular beam epitaxy
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1. Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering;Journal of The Electrochemical Society;2007
2. High-resolution X-ray diffraction determination of composition grading in Hg1-xMnxTe grown by interdiffused multilayer organometallic vapour-phase epitaxy;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1999-10
3. Misfit dislocation microstructure and kinetics of HgCdTe/CdZnTe under tensile and compressive stress;Journal of Crystal Growth;1994-12
4. Lattice relaxation in large mismatch systems of (111)CdTe/(100)GaAs and (133)CdTe/(211)GaAs layers;Journal of Crystal Growth;1994-12
5. Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1993-08
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