Annealing and electrical properties of Hg1−xCdxTe grown by OMVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
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2. The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te
3. Effects of annealing on the electrical properties of CdxHg1−xTe
4. The existence region of the Hg0.8Cd0.2Te phase field
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1. Two-Dimensional Surface Electron Gas;Device Physics of Narrow Gap Semiconductors;2009-08-28
2. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe;Journal of Crystal Growth;1997-05
3. Metalorganic vapor phase epitaxyin-situ growth of p-on-n and n-on-p Hg1-xCdxTe junction photodiodes using tertiarybutylarsine as the acceptor source;Journal of Electronic Materials;1995-05
4. Electrical properties and compositional distributions of CVT and PVT grown Hg1−xCdxTe epilayers;Journal of Electronic Materials;1994-01
5. ORGANOMETALLIC VAPOR PHASE EPITAXIAL GROWTH OFHgCdTeBY THE DIRECT ALLOY GROWTH (DAG) PROCESS;II-VI Semiconductor Compounds;1993-05
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