The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te-Reference-Cited by-同舟云学术

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The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te

Published:1978-01 Issue:1 Volume:7 Page:65-81
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Schmit J. L.,Stelzer E. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02656021.pdf

Reference10 articles.

1. P. W. Kruse, Appl. Opt.4, 687 (1965).

2. T. Koehler and A. M. Chaing, Proc. Soc. PhotoOptical Instrumentation Engineers,62, 26 (1975).

3. C. Verie and R. Granges, Compt. Rend.261, 3349 (1965).

4. T. Koehler and P. J. McNally,Optical Engineering, July/August 1974.

5. D. de Nobel, Philips Res. Repts.14, 361–399 (1959).

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