Numerical prediction of operational parameters in Czochralski growth of large-scale Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Three-dimensional simulations of the Czochralski bulk flow
2. Oxygen transport in magnetic Czochralski growth of silicon
3. A numerical method for the time-dependent Stefan problem in Czochralski crystal growth
4. Natural and forced convection of molten silicon during Czochralski single crystal growth
5. Numerical simulation of molten silicon flow; comparison with experiment
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14
2. A numerical simulation study for the Czochralski growth process of Si under magnetic field;International Journal of Engineering Science;2006-05
3. Effects of temperature coefficient of surface tension on oxygen transport in a small silicon Cz furnace;Journal of Crystal Growth;2004-05
4. Comparison of Eight Different Low-Reynolds Number K-e Models Computed for Natural Convection in a Czochralski Configuration;Journal of Materials Processing & Manufacturing Science;1999-10-01
5. Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon;Journal of Crystal Growth;1999-08
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