Numerical simulation of molten silicon flow; comparison with experiment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method
2. A parameter sensitivity study for Czochralski bulk flow of silicon
3. Numerical simulation of free and forced convection in the classical Czochralski method and in CACRT
4. Numerical calculation of the global heat transfer in a Czochralski furnace
5. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments;Journal of Crystal Growth;2022-09
2. Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals;Journal of Crystal Growth;2021-12
3. Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning method;Journal of Crystal Growth;2021-10
4. Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects;Solid State Phenomena;2009-10
5. Progress in modeling of fluid flows in crystal growth processes;Progress in Natural Science;2008-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3