Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals-Reference-Cited by-同舟云学术

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Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Published:2021-12 Issue: Volume:576 Page:126384
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Kerry,Koch Holger,Trempa Matthias,Kranert Christian,Friedrich Jochen,Derby Jeffrey J.

Funder

BMWi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference48 articles.

1. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth, I. Simulation;Derby;J. Cryst. Growth,1986

2. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth, II. Processing strategies;Derby;J. Cryst. Growth,1986

3. Finite element methods for analysis of the dynamics and control of Czochralski crystal growth;Derby;J. Sci. Comput.,1987

4. On the dynamics of Czochralski crystal growth;Derby;J. Cryst. Growth,1987

5. Radiative heat exchange in Czochralski crystal growth;Atherton;J. Cryst. Growth,1987

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field;CrystEngComm;2023

2. Steps behaving badly: Nonlinear dynamics and a terrace-loading instability during solution growth of lysozyme crystals;Journal of Crystal Growth;2022-11

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