Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. High-reflectance AlPSb/GaPSb distributed Bragg reflector mirrors on InP grown by gas-source molecular beam epitaxy
2. Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 µm wavelength
3. GaPSb: A new ternary material for Schottky diode fabrication on InP
4. High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy
5. Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
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