Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 µm wavelength
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941448?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser
2. Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
3. High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 [micro sign]m wavelengths
4. High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators
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2. Numerical Study of Zn0.66Mg0.34Se/Zn0.74Cd0.26Se Bragg Reflector: Normal and Oblique Incidence;Transactions on Electrical and Electronic Materials;2019-09-23
3. Alloy composition dependence of 1.55 μm GaP1−xSbx/GaP0.2Sb0.8Bragg reflector reflectivity under normal and oblique incidence;Physica Scripta;2010-02-17
4. A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP;Superlattices and Microstructures;2002-06
5. Distributed Bragg reflectors based on (Zn, Cd, Mg)Se for use in the visible spectral range;Journal of Applied Physics;2001-02-15
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