Alloy composition dependence of 1.55 μm GaP1−xSbx/GaP0.2Sb0.8Bragg reflector reflectivity under normal and oblique incidence
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Reference17 articles.
1. Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
2. Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 µm wavelength
3. Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser
4. Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
5. High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 [micro sign]m wavelengths
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1. Numerical Study of Zn0.66Mg0.34Se/Zn0.74Cd0.26Se Bragg Reflector: Normal and Oblique Incidence;Transactions on Electrical and Electronic Materials;2019-09-23
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