High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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1. Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy;Applied Physics Letters;2004-11
2. Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE;Journal of Crystal Growth;2001-07
3. Substrate temperature effects on the growth of In1−x−yGaxAlyAs on InP substrates by molecular beam epitaxy;Journal of Crystal Growth;1998-03
4. Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
5. Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases;Thin Solid Films;1993-08
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