Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE-Reference-Cited by-同舟云学术

Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE

Published:2001-07 Issue: Volume:227-228 Page:289-293
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kitada Takahiro,Aoki Toyohiro,Watanabe Issei,Shimomura Satoshi,Hiyamizu Satoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

3. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

4. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy

5. Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications;Current Applied Physics;2013-05

2. E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology;IEICE Transactions on Electronics;2010

3. 35-nm-Gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz fT;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05

4. Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor;Japanese Journal of Applied Physics;2007-04-24

5. Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE;Journal of Crystal Growth;2007-04