Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE

Author:

Sasaki T.,Yamada H.,Takano S.,Kitamura M.,Mito I.,Suzuki T.,Hoshino H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Research on optoelectronic properties of Zn doped In0.875Ga0.125As0.25P0.75;Ninth Symposium on Novel Photoelectronic Detection Technology and Applications;2023-04-04

2. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes;IEEE Journal of Quantum Electronics;2017-08

3. Device performance of light emitting transistors with C-doped and Zn-doped base layers;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05

4. Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors;Journal of Crystal Growth;2008-09

5. InAlGaAs∕InP light-emitting transistors operating near 1.55μm;Journal of Applied Physics;2008-06

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