Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical source
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3. Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source
4. Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers
5. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
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1. Influence of plasma-activated nitrogen species on PA-MOCVD of InN;Applied Physics Letters;2019-11-25
2. Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation;Japanese Journal of Applied Physics;2013-08-01
3. Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry;Applied Physics Letters;2007-04-23
4. Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
5. In situ reflectance difference spectroscopy of p-type ZnTe:N grown by MBE;Thin Solid Films;2000-09
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