Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2734390
Reference11 articles.
1. Absolute densities of N and excited N2 in a N2 plasma
2. Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems
3. Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasma
4. S. Kumar, MS thesis, West Virginia University, 1996.
5. The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy
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