Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy

Published:2001 Issue: Volume: Page:1-80
ISSN:
Container-title:Handbook of Advanced Electronic and Photonic Materials and Devices
language:
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Author:

Saminadayar K.,Tatarenko S.,Kheng K.,Huard V.,Martrou D.

Publisher

Elsevier

Reference325 articles.

1. Physics and Chemistry of II–VI Compounds,1967

2. Numerical Data and Functional Relationships in Science and Technology;Landolt-Börnstein,1982

3. Wide Band Gap II–VI Semiconductors,1997

4. Properties of Narrow Gap Cadmium-Based Compounds,1994

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