Selective embedded growth of InGaAs/InP double-heterostructures by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
2. Selective area growth for opto-electronic integrated circuits (OEICs)
3. Potentially and challenge of metal-organic molecular beam epitaxy
4. MOCVD of InP and mass transport on structured InP substrates
5. MOVPE growth of SiO2-masked InP structures at reduced pressures
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1. Chemical beam epitaxy on patterned substrates of heterostructures for optoelectronics and nanostructures applications;Journal of Crystal Growth;1996-07
2. Grown mirrors of InP formed by dry etching and selective CBE regrowth for short cavity lasers;Journal of Crystal Growth;1996-07
3. SYMMETRICAL INP MIRROR FACETS FABRICATED BY SELECTIVE CHEMICAL BEAM EPITAXY ON REACTIVE-ION-ETCHED SIDEWALLS;J CRYST GROWTH;1995
4. Symmetric InP mirror facets fabricated by selective chemical beam epitaxy on reactive-ion-etched sidewalls;Journal of Crystal Growth;1995-05
5. Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995
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