Grown mirrors of InP formed by dry etching and selective CBE regrowth for short cavity lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. GaAs double heterostructure lasers fabricated by wet chemical etching
2. GaInAsP/InP DH lasers and related fabricating techniques for integration
3. Short-cavity GaAlAs laser by wet chemical etching
4. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet
5. CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spectromicroscopic study of plasma-treatment effect on InP-substrate-based silicon nitride and silicon oxide patterns;Applied Physics A: Materials Science & Processing;2004-03-01
2. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01
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