The influence of Cl2 on Si1 - xGex selective epitaxial growth and B-doping properties by UHV-CVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
2. Selective Epitaxial Growth of Si and Si1-xGexFilms by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6and GeH4
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4. Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy
5. Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2
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1. Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation;Journal of Crystal Growth;2017-06
2. Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure;Materials Letters;2012-12
3. A novel isolation technology utilizing Si selective epitaxial growth;Electronics and Communications in Japan (Part II: Electronics);1996
4. Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth;Journal of Applied Physics;1995-10
5. Pattern dependence in selective epitaxial Si1−xGexgrowth using reduced‐pressure chemical vapor deposition;Journal of Applied Physics;1995-08-15
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