Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359818
Reference10 articles.
1. The selective epitaxial growth of silicon
2. Plasma etch effects on low‐temperature selective epitaxial growth of silicon
3. An Overview of Dry Etching Damage and Contamination Effects
4. Study of Breakdown Fields of Oxides Grown on Reactive Ion Etched Silicon Surface: Improvement of Breakdown Limits by Oxidation of the Surface
5. Transmission electron microscope study of lattice damage and polymer coating formed after reactive ion etching of SiO2
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1. Recovery of clean ordered (111) surface of etched silicon;Applied Surface Science;2013-10
2. pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions;Materials Science in Semiconductor Processing;2005-02
3. Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device;SPIE Proceedings;2003-07-02
4. Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal;Japanese Journal of Applied Physics;2000-08-15
5. Application of Selective Liquid‐Phase Deposition to Fabricate Contact Holes Without Plasma Damage;Journal of The Electrochemical Society;1999-06-01
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