Author:
Isheden Christian,Hellström Per-Erik,von Haartman Martin,Radamson Henry H.,Östling Mikael
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Matsuda T, Shishiguchi S, Kitajima H. Present ability and problems of ultra-shallow junction formation by RTA. Junction technology, the first international workshop, extended abstracts 2000: p. 29–34.
2. Gahni T, Mistry K, Packan P, Thompson S, Stettler M, Tyagi S, Bohr M. Scaling challenges and device design requirements for high performance sub-50nm gate length planar CMOS transistors, IEDM Tech Digest 2000; 174–5.
3. Gannavaram S, Pesovic N, Öztürk MC. Low temperature (⩽800°C) recessed junction selective silicon-germanium source/drain technology for sub-70nm CMOS. IEDM Tech Digest 2000; 437–40.
4. Strain compensation in ternary Si1−x−yGexBy films;Tillack;J Crystal Growth,1995
5. A Logic Nanotechnology Featuring Strained-Silicon
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1 articles.
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