Strain compensation in ternary Si1 − x − yGexBy films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Modulation doping in GexSi1−x/Si strained layer heterostructures
2. S. Furukawa, J. Etoh, A. Ishizaka and T. Shimada, US Patent No. 4885614 (1989).
3. Si1-x-yGexCy growth and properties of the ternary system
4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
5. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
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