Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure-Reference-Cited by-同舟云学术

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Published:2016-08-09 Issue:9 Volume:16 Page:5437-5443
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Azcatl Angelica¹,Qin Xiaoye¹,Prakash Abhijith²,Zhang Chenxi¹,Cheng Lanxia¹,Wang Qingxiao¹,Lu Ning¹,Kim Moon J.¹,Kim Jiyoung¹,Cho Kyeongjae¹,Addou Rafik¹,Hinkle Christopher L.¹,Appenzeller Joerg²,Wallace Robert M.¹

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States

2. Department of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette 47907, Indiana United States

Funder

Defense Advanced Research Projects Agency

National Institute of Standards and Technology

Microelectronics Advanced Research Corporation

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01853

Reference52 articles.

1. Tunneling Transistors Based on Graphene and 2-D Crystals

2. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

3. Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

4. Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

5. Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte

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