Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
2. High-performance highly strained Ga/sub 0.23/In/sub 0.77/As/Al/sub 0.48/In/sub 0.52/As MODFET's obtained by selective and shallow etch guide recess techniques
3. High current density double modulationdoped Al0.48In0.52As-Ga0.65As millimetre-wave HEMT
4. Effect of Si movement on the electrical properties of inverted AlInAs–GaInAs modulation doped structures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures;Semiconductors;2013-07
2. Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy;Applied Physics Letters;2004-11
3. Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE;Journal of Crystal Growth;2001-07
4. Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. Super-flat interfaces in pseudomorphic In[sub 0.72]Ga[sub 0.28]As/In[sub 0.52]Al[sub 0.48]As quantum wells grown on (411)A InP substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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