High current density double modulationdoped Al0.48In0.52As-Ga0.65As millimetre-wave HEMT
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19931492?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As high electron mobility transistor structures grown by solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies;Journal of Crystal Growth;1995-05
3. Thermally stable AuGe–Au ohmic contacts for single doped InP high electron mobility transistor structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-01
4. Low voltage characteristics of InGaAs/InP composite channel HEMT structure fabricated by optical lithography;Electronics Letters;1994-11-10
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