Epitaxial growth and kinetic study of mismatched (Ga,In) As/InP layers grown by hydride vapour phase epitaxy-Reference-Cited by-同舟云学术

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Epitaxial growth and kinetic study of mismatched (Ga,In) As/InP layers grown by hydride vapour phase epitaxy

Published:1994-01 Issue:1-2 Volume:135 Page:11-22
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Piffault N.,Gil E.,Leymaire J.,Monier C.,Clark S.A.,Anderson M.,Cadoret R.,Vasson A.,Vasson A.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Valence band engineering in strained-layer structures

2. A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier

3. Strained InGaAs/InP quantum well lasers

4. Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

5. Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE;MRS Proceedings;2001

2. Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE;physica status solidi (a);1999-11

3. Epitaxial growth of InAsxP1−x/InP quantum wells by HVPE;Applied Surface Science;1999-04

4. Kinetic expression and study of the growth rate of mismatched structures grown by hydride vapour phase epitaxy;Journal of Crystal Growth;1995-05

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