Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature-Reference-Cited by-同舟云学术

Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature

Published:1991-05-20 Issue:20 Volume:58 Page:2255-2257
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kapre R. M.,Madhukar A.,Guha S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104943

Reference11 articles.

1. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory

2. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature

3. Extremely high current density, low peak voltage, pseudomorphic In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes

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