Confinement and concentration of electrons in Si δ-doped Al x Ga 1 − x As( x = 0 and 0.35) grown by metalorganic vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Diffusion of atomic silicon in gallium arsenide
2. Migration of Si in δ-doped GaAs
3. The delta-doped field-effect transistor (δFET)
4. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions
5. Post-growth diffusion of Si in delta -doped GaAs grown by MBE
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1. Photoluminescence in delta-doped InGaAs/GaAs single quantum wells;Journal of Applied Physics;2000-04-15
2. Si and C δ-doping for device applications;Journal of Crystal Growth;1998-12
3. Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1−xAs quantum wells;Applied Physics Letters;1998-05-04
4. Si and C δ-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices;Materials Science and Engineering: B;1998-02
5. Dynamics of photoexcited holes in n-doped InGaAs/GaAs single quantum well;Applied Physics Letters;1997-09-29
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