Si and C δ-doping for device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy
2. Delta-doping of Semiconductors;Schubert,1995
3. MOVPE growth of Si planar-doped AlGaAs/InGaAs pseudomorphic HEMT structures
4. Very high two‐dimensional electron gas concentrations with enhanced mobilities in selectively double‐δ‐doped GaAs/InGaAs pseudomorphic single quantum well heterostructures
5. Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical determination of the dopant concentration in the δ-doping layer;Journal of Applied Physics;2002-07
2. Electroreflectance bias-wavelength mapping of the modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs structure;Applied Physics Letters;1999-10-04
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