Model for in-situ etching and selective epitaxy of AlxGa1-xAs with HCI gas by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits
2. Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etching
3. Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
4. Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure –MOCVD Using Diethylgalliumchloride and Diethylaluminiumchloride
5. Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD;Journal of Crystal Growth;2005-01
2. In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy;Journal of Crystal Growth;2004-12
3. A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl;Journal of Crystal Growth;2004-07
4. Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD;Journal of Crystal Growth;2003-12
5. A multiscale study of the selective MOVPE of AlxGa1−xAs in the presence of HCl;Journal of Crystal Growth;2003-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3