High-resolution transmission electron microscopy characterization of III–V compounds on Si grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
2. Effects of Thickness on Dislocations in GaP on Si Grown by Metalorganic Chemical Vapor Deposition
3. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
4. Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
5. Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy
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1. Protective CVD Mullite Coatings on Single-Crystal Silicon Substrates;JOM;2013-02-21
2. Deposition of (Multiple Junction) Semiconductor Surfaces;Encyclopedia of Electrochemistry;2002-01-29
3. Crystal growth mechanisms in III-V/Si heteroepitaxy;Advances in the Understanding of Crystal Growth Mechanisms;1999
4. PdIn contacts ton‐type andp‐type GaP;Applied Physics Letters;1996-12-02
5. Initial stage of GaPSi heteroepitaxial growth by metalorganic chemical vapor deposition;Journal of Crystal Growth;1996-05
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