PdIn contacts ton‐type andp‐type GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117239
Reference14 articles.
1. MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
2. Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors
3. High-resolution transmission electron microscopy characterization of III–V compounds on Si grown by metalorganic chemical vapor deposition
4. Metal/n-GaP Schottky barrier heights
5. The role of chemical metallurgy in the emerging field of materials science and engineering
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2. A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes;Journal of Electronic Materials;2017-03-08
3. Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p -type electrode;Journal of Alloys and Compounds;2017-03
4. Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism;Journal of Electronic Materials;2016-06-29
5. A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes;Japanese Journal of Applied Physics;2016-02-18
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