Author:
Kondo Makoto,Tanahashi Toshiyuki
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
2. Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials
3. Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy
4. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen and T. Tanahashi, J. Appl. Phys., in press.
5. Extended Abstracts 1993 Int. Conf. on Solid-State Devices and Materials;Takeuchi,1993
Cited by
43 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献