Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition
2. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
3. Surface segregation of Sn during MBE of n‐type GaAs established by SIMS and AES
4. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
5. Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy
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