Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds-Reference-Cited by-同舟云学术

Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds

Published:1997-06 Issue:2 Volume:17 Page:169-179
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Lee J. W.,Hong J.,Lambers E. S.,Abernathy C. R.,Pearton S. J.,Hobson W. S.,Ren F.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF02766813.pdf

Reference21 articles.

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2. T. R. Hayes, M. Dreisbach, P. Thomas, W. C. Dautremont-Smith, and L. A. Heimbrook,J. Vac. Sci. Technol. B 7, 1142 (1989).

3. S. J. Pearton, inHandbook of Compound Semiconductors, P. H. Holloway and G. E. McGuire, eds. (Noyes, Englewood Cliffs, New Jersey, 1996), Chapter 8.

4. D. L. Melville, J. G. Simmons, and D. A. Thompson,J. Vac. Sci. Technol. B 11, 2038 (1993).

5. D. M. Manos and D. L. Flamm,Plasma Etching—An Introduction (Academic Press, New York, 1989).

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