Etching and oxidation of InAs in planar inductively coupled plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference17 articles.
1. Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers
2. 256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices
3. Photoelectrochemical Etching of InAs
4. Characterization of chemically assisted ion beam etching of InP
5. Reactive ion beam etching of InSb and InAs with ultrasmooth surfaces
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1. InAs FinFETs Performance Enhancement by Superacid Surface Treatment;IEEE Transactions on Electron Devices;2019-04
2. Electronic structure and vibrational properties of KRbAl2B2O7;Materials Research Bulletin;2013-03
3. Composition, morphology and surface recombination rate of HCl–isopropanol treated and vacuum annealed InAs(111)A surfaces;Applied Surface Science;2010-05
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